Abasov FP
Developed a silicon-based photodetector with high sensitivity integrated in the short range. The influence of gamma radiation on the mechanism of current flow in the structure type Schottky barrier, and the p-n junctions. It is shown that the double-barrier structure can improve the photoelectric parameters of conventional detectors.
ఈ కథనాన్ని భాగస్వామ్యం చేయండి
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