Chaudhary N, Prasad KNN and Navdeep Goyal
To understand the behaviour of materials for applications in solid state electronic devices, the materials are to be exposed to different stresses such as thermal, electrical, humidity, optical, nuclear radiations, pressure (static or dynamic) etc. to better understand their structural, morphology, conduction, optical and sensing properties. The Se85-xTe15Agxcompositions prepared from melt-quench technique were exposed to high pressure (0-10 GPa) and temperature (300-373 K). The results depict the change in resistivity with respect to pressure in forward as well as backward pressurization. These results depicts that there is very small change in resistivity with change in pressure and the change in resistivity with respect to pressure follows the same pattern, when the pressure is applied from atmospheric pressure to 10 GPa and vice versa. The results of resistivity change with the variation of Silver in the compositions are also reported in this study. Similar results are observed in case of resistivity change with respect to temperature. Some deviation is observed in the results which are well explained with average coordination number, fermi level change and crystallinity.
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