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వాల్యూమ్ 10, సమస్య 4 (2019)

పరిశోధన వ్యాసం

An Extended Jacobian Elliptic Function Expansion Approach to the Generalized Fifth Order KdV Equation

Alharbi AR, Almatrafi MB and Abdelrahman MAE

In the present study, the well-known extended Jacobian elliptic function expansion approach is successfully employed to reveal the exact travelling wave solutions of the generalized fifth order KdV (GKdV) equation. The travelling wave solutions are derived in forms rational, hyperbolic and exponential functions. The achieved results are correctly confirmed by presenting some 2D and 3D figures. The proposed technique is concise and effective, and simply applicable mathematical concept for constructing the exact solutions of most nonlinear wave equations emerged in some natural phenomena.

పరిశోధన వ్యాసం

Elementary Particles: "Tangled" Electromagnetic Waves, Orbital Electromagnetic Polarization and Orbital Electromagnetic Cyclo-Synchronization

Alexander F Grabenhofer

I propose that elementary particles are made of "tangled" electromagnetic radiation. Modification of the existing electromagnetic wave equations in such a way as to exhibit "orbital polarization" (polarization in 3 dimensions around a fixed point) gives rise to states which describe the various elementary particles/waves that we see in our universe, as well as the other non-observable particles and waves. This is proven using mathematical modeling software (MatLab) as well as through experimental research (designed but not performed as of 2/17/2017). Orbital polarization clarifies several phenomena (strong, weak, gravity, mass, spin, anti-matter, etc.) who's mechanisms have yet to be determined. The results from calculation and simulation support that elementary particles are made of electromagnetic radiation.

చిన్న కమ్యూనికేషన్

Effect of Ionizing Radiation on Optical Properties Hydrogenated Amorphous Silicon thin film Alloy Si

Najafov BA, Isakov GI and Abasov FP

Analyzed by optical properties of hydrogenated amorphous silicon thin films a-Si:H. Optical band gap width and other settings for the а-nk-Si:H and its alloys depend not only on the content of hydrogen, but also on other parameters: substrate temperature, sedimentation rate, annealing temperature, composition, hydrogen partial pressure and the structure of the films. For amorphous and nano crystalline alloys and-nk-Si: H.

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